Wafer Works offers a comprehensive selection of products in different fields. We provide lightly-doped and highly-doped wafers essential for integrated circuits and discrete components. Our offerings encompass various types of doping, including boron, phosphorus, arsenic, antimony, and co-doped products tailored for specific purposes. The primary classification (based on 8-inch) is as below. Please feel free to reach out to us for more information on our products.
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| Lightly-doped Polished (Take 8-inch 100 Crystal Orientation as an Example) | ||
|---|---|---|
| Product Category | Key Indicator (Take >0.12µm COP as an Example) | Other Indicator |
| Standard Prime | 30-100 particles/wafer | Crystal orientation, oxygen content, RRG, ORG, BMD, DZ, flatness, crystal edge/ backside treatment can be customized to meet the specific requirements of our customers. |
| Low COP/Advanced Low COP | 10-30 particles/wafer | |
| NPC (Nearly Perfect Crystal) | < 10 particles/wafer | |
| Ultra-high Resistivity | ---- | (Except above) Res. > 1,000Ω-cm |
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| Highly-doped Polished (Take 8-inch 100 Crystal Orientation as an Example) | ||
|---|---|---|
| Type of Doping Materials | Key Indicator (Take Resistivity as an Example) | Other Indicator |
| Boron | > 0.6mΩ-cm | Crystal orientation, oxygen content, RRG, ORG, BMD, DZ, flatness, edge andbackside treatment can be customized to meet the specific requirements of our customers. |
| Phosphorus | > 0.9mΩ-cm | |
| Arsenic | > 1.8mΩ-cm | |
| Antimony | > 9.0mΩ-cm | |
| Multi-element co-doping | ---- | (Except above, co-doping can also include nitrogen and germanium |