GaN Epi

Wafer Works can provide customized and high-quality GaN epitaxial wafers to customers.

In addition to owning key know-how about GaN epitaxial growth technology, we also can adjust silicon substrate conditions in order to optimize GaN epi quality with least thermal stress and defects. GaN epitaxy also can be grown on SiC, SOI and QST advanced substates besides silicon substrate.

The typical E-Mode GaN epitaxial structure is illustrated below:

Our products include GaN Epi / Si and GaN Epi / SiC, which are used in power components and high-frequency communication components, respectively.