Technology Strengths
Key Technology
Crystal Growth
Wafer Works is developing its core technologies and products both vertically and horizontally.

Vertical Integration

Based on core silicon technology, Wafer Works provides complete product portfolio and technical services with its vertically integrated technologies from ingot growth, wafering to epitaxial-layer process.

Horizontal Development

Positioned as a customer centered solution provider of Si semiconductor materials, Wafer Works, with its subsidiary in charge of production and sales, is also extending its core technologies to the materials development of Si single crystal ingots for solar cells and sapphire substrates for LEDs.

Overview of Key Technologies

Crystal Growth
Hot zone design
Control system design
Crystal growth simulation technology
Ultra-low resistivity crystal growth technology
Ultra-low Oi crystal growth technology
Wafer stress control technology
Edge profile and roughness control technology
Surface grinding technology
Extrinsic gettering technology
LTO film technology
Polishing technology
The trend of extended applications in semiconductor power MOSFETs is moving to the increasing requirement for small form factor and higher power efficiency. The driving of smaller Rds(on) for power MOSFETs to reduce power consumption becomes a challenge and vital for the development of power semiconductor devices. Therefore the continual push for lower substrate resistivity has also been highly focused in the crystal growth technology development in Wafer Works.
Other than resistivity the control of oxygen content in silicon is another key index in silicon-growth technology, which also plays a crucial role on the device performance. Wafer Works has developed MCZ technology that allows us to precisely control the oxygen content to meet the demand of high-end device market.
The shrink of device pitch follows Moor’s Law. As the device density increases, the demand for higher substrate quality, better wafer site flatness and higher purity wafer surface, is also increasing with time. Wafer Works endeavors to improve wafer product quality as well as crystal growth technology, and the key factors involved in the wafering technology development are listed in the following:.

Technology of Wafer Stress Control

The warp represents the distribution of stress on the wafer. Its variation is well contained within 10um (Cpk> 1.33) in Wafer Works through proper control of the run times of wire guide, the control of slurry quality and other slicing process parameters to meet the stress requirement in subsequent wafering processes.

Technology for Shape of Edge Profiling and Roughness Control

Wafer Works has extensive experience on wafer edge grinding. Various design selections of edge profiles are available to meet different customer’s demands. Also, we co-work with customers to develop special edge profiles. Besides, Wafer Works has developed helical process, a solution for special and strict specification of edge condition, and can greatly improve both the edge profile and edge roughness.

Extrinsic Gettering Technology

Wafer Works is capable of depositing single (or multiple) poly crystalline thin film layers on silicon wafer to enhance extrinsic gettering capability of Si wafer and adjust wafer warps.

Polishing Technology

The technology of wafer polishing has always been improving in Wafer Works to satisfy the arising demand from customers for superior quality of wafer surfaces. The unrelenting demand of improved TTV and STIR, which is becoming more critical on the products of deep sub-micron generation, is accomplished through the advancement of polishing technology and the introduction of new polishing equipment in Wafer Works.
Wafer Works Epitaxial Corporation, a subsidiary in Shanghai, China, is established to provide epi layers and making a complete Si substrate product portfolio in Wafer Works, and providing one-stop shopping opportunity for our customers.
The experience Wafer Works has accumulated over the past years on the substrate technology development and manufacturing enables it to optimize substrate products to be suitable for the development of epitaxial process, for either single layer or multi-layer products. The multi-layer epitaxial technology makes it possible in offering diversified silicon wafers, which realize device designs for specific product applications.


Power MOS/ IGBT/ FRED/ Diode/ Schottky Diode/ Bipolar Transistor/ Discrete device/Analog